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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PN package Complement to type BDW83/83A/83B/83C/83D DARLINGTON High DC current gain APPLICATIONS For use in power linear and switching applications. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BDW84/84A/84B/84C/84D Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL PARAMETER BDW84 BDW84A VCBO Collector-base voltage INCH VCEO ANG BDW84B BDW84C BDW84D BDW84 BDW84A SEM E Open emitter DUC ICON CONDITIONS VALUE -45 TOR UNIT -60 -80 V -100 -120 -45 -60 Collector-emitter voltage BDW84B BDW84C BDW84D Open base -80 -100 -120 V VEBO IC IB PC Tj Tstg Emitter-base voltage Collector current Base current Open collector -5 -15 -0.5 V A A W TC=25ae Collector power dissipation Ta=25ae Junction temperature Storage temperature 150 3.5 150 -65~150 ae ae Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER BDW84 BDW84A V(BR)CEO Collector-emitter breakdown voltage BDW84B BDW84C BDW84D VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage BDW84 IC=-6A ,IB=-12mA IC=-30mA, IB=0 SYMBOL BDW84/84A/84B/84C/84D CONDITIONS MIN -45 -60 -80 -100 -120 TYP. MAX UNIT V -2.5 -4.0 -2.5 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 -0.5 -5.0 V V V IC=-15A ,IB=-150mA IC=-6A ; VCE=-3V VCB=-45V, IE=0 TC=150ae VCB=-60V, IE=0 TC=150ae VCB=-80V, IE=0 TC=150ae VCB=-100V, IE=0 TC=150ae VCB=-120V, IE=0 TC=150ae ICBO IN Collector cut-off current BDW84A BDW84B BDW84C BDW84D BDW84 ICEO Collector cut-off current HAN C BDW84A BDW84B SEM GE VCE=-30V, IB=0 VCE=-30V, IB=0 VCE=-40V, IB=0 VCE=-50V, IB=0 VCE=-60V, IB=0 VEB=-5V; IC=0 OND IC TOR UC -1 mA mA BDW84C BDW84D IEBO hFE-1 hFE-2 VEC ton toff Emitter cut-off current DC current gain DC current gain Diode forward voltage Turn-on time Turn-off time -2 750 100 -3.5 0.9 7.0 |I |I 20000 mA IC=-6A ; VCE=-3V IC=-15A ; VCE=-3V IE=-15A IC =-10 A, IB1 =-IB2=-40 mA RL=3| ; VBE(off) =4.2V Duty CycleU 2% V s s THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 0.83 UNIT ae /W 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BDW84/84A/84B/84C/84D SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions(unindicated tolerance:A 0.1mm) 3 |
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